Photosensitive field-effect transistor

Photofield-effect transistors (PD-MOS), including photodiodes, phototransistors, and avalanche diodes. Widely applicable photoelectric sensors. The spectral response range ranges from visible light to near-infrared. Adopting 180nm CMOS production process. It has the characteristics of low noise, high gain, and wide dynamic response.

characteristic:

Low noise, high gain, high responsiveness, and wide dynamic response.

Application:

Light detection, illuminance measurement, weak light imaging, spectral measurement.